The Bipolar Transistor at High Frequencies
All modern mobile communication systems continuously demand higher levels of integration in order to minimize the cost, reduce the terminal size and decrease the power consumption. For all systems operating up to 2 GHz (e.g. DECT wireless phones), integrated circuits for the RF, IF and baseband parts have already been fabricated and successfully used in commercial products. Moreover, one-chip solutions have appeared in the literature but up to now (1998), none of them has been applied in a commercial product. The basic cells of an RF transmitter are the Low Noise Amplifier in the receiver path, the Power Amplifier in the transmitter path and, the mixers and various filters in both parts. The most difficult part to integrate in a modern telecommunications receiver, is the RF front-end. Additionally, it is the part of the system that exhibits the highest power consumption. For this purpose, the selection of the proper technology for the integration of this particular subsystem plays a very important role. Among silicon processes, the bipolar technologies are the preferred ones.
KeywordsBipolar Transistor Junction Capacitance Bipolar Device BiCMOS Process BiCMOS Technology
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