Abstract
Practical aspects of low-voltage, 1–3 watt RF power amplifiers for wireless phones will be presented, particularly as they relate to GaAs MESFET integrated circuits. Device, package, and circuit approaches will be reviewed. Typical performance of GaAs MESFET power amplifiers for 840MHz cellular AMPS & TDMA, 1900MHz PCS TDMA, and DCS 1800 will be presented.
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© 1999 Springer Science+Business Media Dordrecht
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Taylor, S.S. (1999). Design Considerations for GaAs MESFET RF Power Amplifiers. In: Huijsing, J., van de Plassche, R., Sansen, W. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2983-2_18
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DOI: https://doi.org/10.1007/978-1-4757-2983-2_18
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5071-0
Online ISBN: 978-1-4757-2983-2
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