Abstract
In this paper some basic aspects of RF-bipolar and Silicium Germanium technológy are described to indicate the determining factors that have allowed the succes of Silicon in the GHz range wireless applications. In addition the basic circuits are discussed for the low voltage design of a single chip cellular transceiver. Also preliminary measurement results of a realization in a 50 GHz Silicon Germanium technology are shown for the receiver and the transmitter section of the single chip transceiver first silicon with an integrated VCO. The circuits operate on a 2.7 to 3.6 Volt battery.
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© 1999 Springer Science+Business Media Dordrecht
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Sevenhans, J., Verstraeten, B. (1999). Radio Transceiver Circuits in Silicon Germanium. In: Huijsing, J., van de Plassche, R., Sansen, W. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2983-2_16
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DOI: https://doi.org/10.1007/978-1-4757-2983-2_16
Publisher Name: Springer, Boston, MA
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