Design of Broadband Low-Noise Amplifiers in Deep-Submicron CMOS technologies

  • Johan Janssens
  • Michiel Steyaert


In general it is believed that the implementation of low-noise RF amplifiers in CMOS at a power dissipation competitive with bipolar technologies requires the use of narrow-band techniques. In this paper the design of power-efficient broadband low-noise amplifiers is explored, i.e., without using accurately tuned LC-tanks nor exploiting the ‘overdrive’ capabilities provided by on-chip inductors.

Based on a topology example of a low-power broadband low-noise amplifier, some aspects of broadband LNA design are illustrated. A prototype design, dimensioned in a 0.5 μm CMOS technology, is described and measured. It is explained how the underlying mechanism of the Non-QuasiStatic effect affects the input impedance even at practical RF frequencies, suggesting the use of NQS models also for these frequencies.


Input Impedance Noise Figure Image Rejection Reverse Isolation Order Intermodulation 
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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Johan Janssens
    • 1
  • Michiel Steyaert
    • 1
  1. 1.KULeuven, ESAT-MICASHeverleeBelgium

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