• James B. Kuo
  • Ker-Wei Su


SOI CMOS technology has been becoming another major technology for next-generation VLSI[l]-[6]. In this chapter, starting from the fundamentals of SOI, the advantages of the SOI CMOS technology are described. The applications of SOI CMOS technology for realizing VLSI digital circuits are introduced. The objectives of this book in terms of processing technology, device modeling, and circuit designs for SOI CMOS VLSI are outlined.


CMOS Technology Parasitic Capacitance Subthreshold Slope VLSI Circuit CMOS Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. [1]
    J.-P. Colinge, “Silicon-on-Insulator Technology: Materials to VLSI, 2nd ed.” Kluwer Academic: Boston, 1997.CrossRefGoogle Scholar
  2. [2]
    M. Yoshimi, M. Takahashi, S. Kambayashi, M. Kemmochi, H. Hazama, T. Wada, K. Kato, H. Tango, and K. Natori, “Electrical Properties and Technological Perspectives of Thin-Film SOI MOSFETs,” IEICE Trans. Elec, Vol. 74, No. 2, pp. 337–351, Feb. 1991.Google Scholar
  3. [3]
    S. Kawamura, “Ultra-Thin-Film SOI Technology and Its Application to Next Generation CMOS Devices,” SOI Conf. Dig., pp. 6–7, 1993.Google Scholar
  4. [4]
    Y. Inoue and Y. Yamaguchi, “Trends in Research and Development of SOI Technology,” Applied Physics, Vol. 64, No. 11, pp. 1104–1110, 1995 (in Japanese).Google Scholar
  5. [5]
    B. Davari, R. H. Dennard, and G. G. Shahidi, “CMOS Scaling for High Performance and Low Power—The Next Ten Years,” IEEE Proc, Vol. 83, No. 4, pp. 595–606, Apr. 1995.CrossRefGoogle Scholar
  6. [6]
    S. Cristoloveanu and S. Li, “Electrical Characterization of Silicon-on-Insulator Materials and Devices,” Kluwer Academic: Boston, 1995.CrossRefGoogle Scholar
  7. [7]
    S. Ohr, “GaAs Finds Home in Wireless & High-Speed Data-Communications Applications,” Computer Design, pp. 59–68, March 1994.Google Scholar
  8. [8]
    G. G. Shahidi, T. H. Ning, T. I. Chappell, J. H. Comfort, B. A. Chappell, R. Franch, C. J. Anderson, P. W. Cook, S. E. Schuster, M. G. Rosenfield, M. R. Polcari, R. H. Dennard, and B. Davari, “SOI for a 1-Volt CMOS Technology and Application to a 512Kb SRAM with 3.5ns Access Time,” IEDM Dig., pp. 813–816, 1993.Google Scholar
  9. [9]
    Y. Kado, T. Ohno, M. Harada, K. Deguchi and T. Tsuchiya, “Enhanced Performance of Multi-GHz PLL LSIs Using Sub-l/4-Micron Gate Ultrathin Film CMOS/SIMOX Technology with Synchrotron X-Ray Lithography,” IEDM Dig., pp. 243–246, 1993.Google Scholar
  10. [10]
    M. H. Hanes, A. K. Agarwal, T. W. O’Keeffe, H. M. Hobgood, J. R. Szedon, T. J. Smith, R. R. Siergiej, P. G. McMullin, H. C. Nathanson, M. C. Driver, and R. N. Thomas, “MICROXIM—An All-Silicon Technology for Monolithic Microwave Integrated Circuits,” IEEE Elec. Dev. Let., Vol. 14, No. 5, pp. 219–221, May 1993.CrossRefGoogle Scholar
  11. [11]
    R. Dekker, W. T. A. v.d. Einden, and H. G. R. Maas, “An Ultra Low Power Lateral Bipolar Polysilicon Emitter Technology on SOI,” IEDM Dig., pp. 75–78, 1993.Google Scholar
  12. [12]
    W. M. Huang, K. Klein, M. Grimaldi, M. Racanelli, S. Ramaswami, J. Tsao, J. Foerstner, and B. Y. Hwang, “TFSOI BiCMOS Technology for Low Power Applications,” IEDM Dig., pp. 449–452, 1993.Google Scholar
  13. [13]
    G. G. Shahidi, D. D. Tang, B. Davari, Y. Taur, P. McFarland, K. Jenkins, D. Danner, M. Rodriguez, A. Megdanis, E. Petrillo, M. Polcari and T. H. Ning, “A Novel High-Performance Lateral Bipolar on SOI,” IEDM Dig., pp. 663–666, 1991.Google Scholar
  14. [14]
    M. L. Alles, “Thin-Film SOI Emerges,” IEEE Spectrum, pp. 37–45, June 1997.Google Scholar
  15. [15]
    T. Tsuchiya, “Prospect of SOI Devices,” Applied Physics, Vol. 66, No. 11, pp. 1191–1198, 1997 (in Japanese).MathSciNetGoogle Scholar
  16. [16]
    T. Stanley, “Semiconductor Wafer Bonding: Science, Technology and Applications,” Elec. Chem. Soc. Proc, Vol. 93–29, p. 303, 1993.Google Scholar
  17. [17]
    A. J. Auberton-Herve, “SOI: Materials to Systems,” IEDM Dig., pp. 3–10, 1996.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1998

Authors and Affiliations

  • James B. Kuo
    • 1
  • Ker-Wei Su
    • 1
  1. 1.National Taiwan UniversityTaiwan

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