The SOI MOSFET Operating in a Harsh Environment

  • Jean-Pierre Colinge
Chapter

Abstract

SOI MOSFETs present several properties which allow them to operate in harsh environments where bulk devices would typically fail from operating satisfactorily. These interesting properties of the SOI MOSFETs are due to the small volume of silicon in which the devices are made, to the small area of the source-body and drain-body junctions, and to the presence of a back gate. In this Chapter, we will describe the behavior of the SOI MOSFET operating in two cases of extreme environments: the exposure to radiations and high-temperature operation.

Keywords

Linear Energy Transfer Gate Oxide Bipolar Transistor Depletion Zone Oxide Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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