Other SOI Devices

  • Jean-Pierre Colinge

Abstract

Although CMOS remains the most obvious field of application for SOI, the ease of processing SOI substrates, the full dielectric isolation of the devices and the possibility of using a back gate have sparked a large research activity in the field of novel SOI devices. Indeed, different novel bipolar and MOS structures have been proposed such as lateral bipolar and bipolar-MOS devices, vertical bipolar transistors with back gate-induced collector, high-voltage lateral devices of various kinds and double-gate MOS devices. This Chapter will review these devices, qualitatively explain their physics and explore their possible fields of application.

Keywords

Threshold Voltage Gate Voltage Gate Oxide Silicon Film Bipolar Transistor 
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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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