SOI Materials Characterization

  • Jean-Pierre Colinge

Abstract

Once Silicon-On-Insulator material has been produced, it is important to characterize it in terms of quality. The most critical parameters are the defect density, the thickness of both the top silicon layer and the buried insulator, the concentration of impurities, the carrier lifetime, and the quality of the silicon-insulator interfaces.

Keywords

Grain Boundary Minority Carrier Silicon Film Spectroscopic Ellipsometry Interface Trap Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    S. Cristoloveanu and S.S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices, Kluwer Academic Publishers, 1995Google Scholar
  2. 2.
    S.N. Bunker, P. Sioshansi, M.M. Sanfacon, S.P. Tobin, Appl. Phys. Lett. Vol. 50, p. 1900, 1987CrossRefGoogle Scholar
  3. 3.
    Z. Knittl, Optics of Thin Films, Wiley, New York, p. 37, 1976Google Scholar
  4. 4.
    F. Van de Wiele, Solid-State Imaging, NATO Advanced Study Institutes Series, Noordhoff, Leyden, p. 29, 1976Google Scholar
  5. 5.
    J.P. Colinge and F. Van de Wiele, J. Appl. Phys, Vol. 52, p. 4769, 1981CrossRefGoogle Scholar
  6. 6.
    D.E. Aspenes, Properties of Silicon, Published by INSPEC (IEE), p. 59, 1988Google Scholar
  7. 7.
    T.I. Kamins and J.P. Colinge, Electronics Letters, Vol. 22, p. 1236, 1986CrossRefGoogle Scholar
  8. 8.
    J. Vanhellemont, J.P. Colinge, A. De Veirman, J. Van Landuyt, W. Skorupa, M. Voelskow, and H. Bartsch, Proceedings of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 187, 1990Google Scholar
  9. 9.
    Y.S. Chang and S.S. Li, in “silicon-on-Insulator Technology and Devices”, Ed. by S. Cristoloveanu, Electrochemical Society Proceedings Vol. 94–11, p. 154, 1994Google Scholar
  10. 10.
    H.J. Hovel, in “Semiconductors and Semimetals”, Vol. 11 “Solar Cells”, Ed. by R.K. Wilardson and A.C. Beer, Academic Press, p. 203, 1975Google Scholar
  11. 11.
    P.L. Swart and B.M. Lacquet, Journal of Electronic Materials, Vol. 19, No. 12, p. 1383, 1990CrossRefGoogle Scholar
  12. 12.
    P.L. Swart and B.M. Lacquet, Proceedings IEEE SOS/SOI Conference, p. 153, 1989Google Scholar
  13. 13.
    P.L. Swart and B.M. Lacquet, Journal of Electronic Materials, Vol. 19, No. 8, p. 809, 1990CrossRefGoogle Scholar
  14. 14.
    P.L. Swart and B.M. Lacquet, Journal of Applied Physics, Vol. 70, No. 2, p. 1069, 1991CrossRefGoogle Scholar
  15. 15.
    P.L. Swart and B.M. Lacquet, Nuclear Instruments and Methods in Physics Research, Vol. 84, No. 2, p. 281, 1994CrossRefGoogle Scholar
  16. 16.
    R.M.A. Azzam and N.M. Bashara, Ellipsometry and Polarized Light, Elsevier Science Publishers, North-Holland Personal Edition, chapter 1, 1987Google Scholar
  17. 17.
    D.A.G. Bruggeman, Annalen der Physik, Vol. 5, p. 636, 1935Google Scholar
  18. 18.
    J. Whitfield and S. Thomas, IEEE Electron Device Letters, Vol. 7, p. 347, 1986CrossRefGoogle Scholar
  19. 19.
    D.C. Joy, D.E. Newbury, and D.L. Davidson, J. Appl. Phys., Vol. 53, p. R81, 1982CrossRefGoogle Scholar
  20. 20.
    K.A. Bezjian, H.I. Smith, J.M. Carter, and M.W. Geis, J. Electrochem. Soc, Vol. 129, p. 1848, 1982CrossRefGoogle Scholar
  21. 21.
    W.K. Chu, J.W. Mayer, and M.A. Nicolet, Backscattering Spectrometrv, Academic Press, N.Y., 1978Google Scholar
  22. 22.
    M.T. Duffy, J.F. Corboy, G.W. Cullen, R.T. Smith, R.A. Soltis, G. Harbeke, J.R. Sandercock, and M. Blumenfeld, J. Crystal Growth, Vol. 58, p. 10, 1982CrossRefGoogle Scholar
  23. 23.
    G. Harbeke and L. Jastrzebski, J. Electrochem. Society, Vol. 137, p. 696, 1990CrossRefGoogle Scholar
  24. 24.
    W.C. Dash, J. Appl. Phys, Vol. 27, p. 1993, 1956CrossRefGoogle Scholar
  25. 25.
    D.G. Schimmel, J. Electrochem. Soc, vol 126, p. 479, 1979CrossRefGoogle Scholar
  26. 26.
    F. Secco d’Aragona, J. Electrochem. Soc., Vol. 119, p. 948, 1972CrossRefGoogle Scholar
  27. 27.
    E. Sirtl and A. Adler, Zeitung für Metallkunde, Vol. 52, p. 529, 1961Google Scholar
  28. 28.
    M. Wright Jenkins, J. Electrochem. Soc., Vol. 124, p. 757, 1977CrossRefGoogle Scholar
  29. 29.
    T.R. Guilinger, M.J. Kelly, J.W. Medernach, S.S. Tsao, J.O. Steveson, and H.D.T. Jones, Proceedings IEEE SOS/SOI Technology Conference, p. 93, 1989Google Scholar
  30. 30.
    M.J. Kelly, T.R. Guilinger, J.W. Medernach, S.S. Tsao, H.D.T. Jones, and J.O. Steveson, Proceedings of the fourth international Symposium on Silicon-on-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society, p. 120, 1990Google Scholar
  31. 31.
    T.R. Guilinger, M.J. Kelly, J.W. Medemach, S.S. Tsao, J.O. Steveson, and H.D.T. Jones, Proceedings IEEE SOS/SOI Technology Conference, p. 93, 1989Google Scholar
  32. 32.
    M.J. Kelly, T.R. Guilinger, J.W. Medemach, S.S. Tsao, H.D.T. Jones, and J.O. Steveson, Proceedings of the fourth international Symposium on Silicon-on-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society, p. 120, 1990Google Scholar
  33. 33.
    K.K. Ng, G.K. Celler, E.J. Povilonis, R.C. Frye, H.J. Leamy, and S.M. Sze, IEEE Electron Device Letters, Vol. 2, p. 316, 1981CrossRefGoogle Scholar
  34. 34.
    J.P. Colinge, H. Morel, and J.P. Chante, IEEE Trans. on Electron Devices, Vol. 30, p. 197, 1983CrossRefGoogle Scholar
  35. 35.
    T. Nishimura, K. Sugahara, S. Kusunoki, and Y. Akasaka, Ext. Abstracts of the 17th Conference of on Solid-State Devices and Materials, Tokyo, p. 1147, 1985Google Scholar
  36. 36.
    T.I. Kamins, Electronics Letters, Vol. 23, p. 175, 1987CrossRefGoogle Scholar
  37. 37.
    I. De Wolf, J. Vanhellemont, H.E. Maes, A. Romano-Rodriguez, and H. Norström, Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and devices, Ed. by: K. Izumi, S. Cristoloveanu, P.L.F. Hemment, and G.W. Cullen, The Electrochemical Society Proceedings volume 92–13, p. 307, 1992Google Scholar
  38. 38.
    E. Martin, A. Pérez-Rodriguez, J. Jimenez, and J.R. Morante, in “silicon-on-Insulator Technology and Devices”, Ed. by S. Cristoloveanu, Electrochemical Society Proceedings Vol. 94–11, p. 185, 1994Google Scholar
  39. 39.
    J. Macla, T. Jawhari, A. Pérez-Rodriguez, and J.R. Morante, in “silicon-on-Insulator Technology and Devices”, Ed. by S. Cristoloveanu, Electrochemical Society Proceedings Vol. 94–11, p. 148, 1994Google Scholar
  40. 40.
    L. Jastrzebski, J.T. McGinn, P. Zanzucchi, and B. Cords, J. Electrochem. Soc., Vol. 137, p. 306, 1990CrossRefGoogle Scholar
  41. 41.
    S. Cristoloveanu, J. Pumfrey, E. Scheid, P.L.F. Hemment, and R.P. Arrowsmith, Electronics Letters, Vol. 21, p. 802, 1985CrossRefGoogle Scholar
  42. 42.
    M.B. Shabani, T. Yoshimi, H. Abe, T. Nakai, and B. Cords, in “Silicon-On-Insulator Technology and Devices VII”, Ed. by. P.L.F. Hemment, S. Cristoloveanu, K. Izumi, T. Houston, and S. Wilson, Electrochemical Society Proceedings Vol. 96–3,p. 162, 1996Google Scholar
  43. 43.
    T.S. Moss, Optical Properties of Semiconductors, Butterworths, London, Chapter 4, 1959Google Scholar
  44. 44.
    A.M. Goodman, J. Appl. Phys, Vol. 53, p. 7561, 1982CrossRefGoogle Scholar
  45. 45.
    L. Jastrzebski, G. Cullen, and R. Soydan, J. Electrochem. Society, Vol. 137, p. 303, 1990CrossRefGoogle Scholar
  46. 46.
    M.A. Guerra, Proceedings of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 21, 1990Google Scholar
  47. 47.
    K. Nauka, M. Cao, and F. Assaderaghi, Proceedings of the IEEE International SOI Conference, p. 52, 1995Google Scholar
  48. 48.
    J.L. Freeouf and S.T. Liu, Proceedings of the IEEE International SOI Conference, p. 74, 1995Google Scholar
  49. 49.
    J.L. Freeouf, N. Braslau, and M. Wittmer, Applied Physics Letters, Vol. 63, p. 189, 1993CrossRefGoogle Scholar
  50. 50.
    H.S. Chen, F.T. Brady, S.S. Li, and W.A. Krull, IEEE Electron Device Letters, Vol. 10, p. 496, 1989CrossRefGoogle Scholar
  51. H.S. Chen and S.S. Li, Proceedings of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 328, 1990Google Scholar
  52. 52.
    D.P. Vu and J.C. Pfister, Appl. Phys. Letters, Vol. 47, p. 950, 1985CrossRefGoogle Scholar
  53. 53.
    T. Elewa, H. Haddara, and S. Cristoloveanu, in “Solid-State Devices”, Ed. By. G. Soncini and P.U. Calzolari, Elsevier Science Publishers (North-Holland), p. 599, 1988Google Scholar
  54. 54.
    H.S. Chen, F.T. Brady, S.S. Li, and W.A. Krull, IEEE Electron Device Letters, Vol. 10, p. 496, 1989CrossRefGoogle Scholar
  55. 55.
  56. H.S. Chen and S.S. Li, Proceedings of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 328, 1990Google Scholar
  57. 57.
    D.P. Vu and J.C. Pfister, Appl. Phys. Letters, Vol. 47, p. 950, 1985CrossRefGoogle Scholar
  58. 58.
    T. Elewa, H. Haddara, and S. Cristoloveanu, in “Solid-State Devices”, Ed. By. G. Soncini and P.U. Calzolari, Elsevier Science Publishers (North-Holland), p. 599, 1988Google Scholar
  59. 59.
    M. Zerbst, Z. Angew. Phys., Vol. 22, p. 30, 1966Google Scholar
  60. 60.
    P.K. McLarty, T. Elewa, B. Mazhari, M. Mukherjee, T. Ouisse, S. Cristoloveanu, D.E. Ioannou, and D.P. Vu, Proceedings IEEE SOS/SOI Technology Conference, p. 54, 1989Google Scholar
  61. 61.
    T. Elewa, Ph.D. Thesis, ENSERG-LPCS, Grenoble (France), p. 90, July 1990Google Scholar
  62. 62.
    M. Haond and J.P. Colinge, Electronics Letters, Vol. 25, p. 1640, 1989CrossRefGoogle Scholar
  63. 63.
    D. Flandre and F. Van De Wiele, IEEE Electron Device Letters, Vol. 9, p. 296, 1988CrossRefGoogle Scholar
  64. 64.
    M. Gaitan and P. Roitman, Proceedings IEEE SOS/SOI Technology Conference, p. 48, 1989Google Scholar
  65. 65.
    J.H. Lee and S. Cristoloveanu, IEEE Electron Device Letters, Vol. 7, p. 537, 1986CrossRefGoogle Scholar
  66. 66.
    J.S. Brugler and P.G.A. Jespers, IEEE Trans. Electron Devices, Vol. 16, p. 297, 1969CrossRefGoogle Scholar
  67. 67.
    G. Groeseneken, H.E. Maes, N. Beltran, and R.F. Dekeersmaecker, IEEE Trans. Electron Devices, Vol. 31, p. 42, 1984CrossRefGoogle Scholar
  68. 68.
    T. Elewa, H. Haddara, S. Cristoloveanu and M. Bruel, J. de Physique, Vol. 49, No 9-C4, p. C4–137, 1988Google Scholar
  69. 69.
    Y. Li and T.P. Ma, International Symposium on VLSI Technology, Systems, and Applications, Proceedings of Technical Papers, p. 123, 1997Google Scholar
  70. 70.
    K. Nauka, Microelectronic Engineering, Vol. 36, No. 1–4, p. 351, 1997CrossRefGoogle Scholar
  71. 71.
    S. Cristoloveanu and S. Williams, IEEE Electron Device Letters, Vol. 31, p. 102, 1992CrossRefGoogle Scholar
  72. 72.
    S. Cristoloveanu and S.S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices, Kluwer Academic Publishers, p. 104, 1995Google Scholar
  73. 73.
    T. Ouisse, P. Morfouli, O. Faynot, H. Seghir, J. Margail, and S. Cristoloveanu, Proceedings of the IEEE International SOI Conference, p. 30, 1992Google Scholar
  74. 74.
    S. Cristoloveanu, A. Ionescu, C. Maleville, D. Munteanu, M. Gri, B. Aspar, M. Bruel, and A.J. Auberton-Hervé, in “Silicon-On-Insulator Technology and Devices VIP”, Ed. by. P.L.F. Hemment, S. Cristoloveanu, K. Izumi, T. Houston, and S. Wilson, Electrochemical Society Proceedings Vol. 96–3,p. 142, 1996Google Scholar
  75. 75.
    S. Wiliams, S. Cristoloveanu, and G. Campisi, Materials Science Engineering, Vol. B12, p. 191, 1992CrossRefGoogle Scholar
  76. 76.
    A.M. Ionescu, S. Cristoloveanu, S.R. Wilson, A. Rusu, A. Chovet, and H. Seghir, Nuclear Instr. and Methods in Phys. Res., Vol. 112, p. 228, 1996Google Scholar
  77. 77.
    A.M. Ionescu, S. Cristoloveanu, D. Munteanu, T. Elewa, and M. Gri, Solid-State Electronics, Vol. 39, No. 12, p. 1753, 1996CrossRefGoogle Scholar
  78. 78.

Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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