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SOI Materials Characterization

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Silicon-on-Insulator Technology: Materials to VLSI

Abstract

Once Silicon-On-Insulator material has been produced, it is important to characterize it in terms of quality. The most critical parameters are the defect density, the thickness of both the top silicon layer and the buried insulator, the concentration of impurities, the carrier lifetime, and the quality of the silicon-insulator interfaces.

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Authors and Affiliations

  1. Université catholique de Louvain, Belgium

    Jean-Pierre Colinge

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Colinge, JP. (1997). SOI Materials Characterization. In: Silicon-on-Insulator Technology: Materials to VLSI. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2611-4_3

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  • DOI: https://doi.org/10.1007/978-1-4757-2611-4_3

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