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Analog Circuit Design pp 243–268Cite as

Concepts for bandgap References and voltage measurement systems

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Abstract

This paper gives a review of the concepts and basic problems of bandgap References. It deals with the temperature dependence of the I C (V BE ) characteristics of bipolar transistors, and methods to compensate for this temperature dependence for application in accurate bandgap References. Methods and technologies to calibrate bandgap References are discussed. As case studies, two types of bandgap References are discussed. One of them is implemented in bipolar technology, the other one in CMOS technology. A novel type of bandgap reference, the so-called dynamic bandgap reference, is presented. This bandgap reference is particularly useful for CMOS measurement systems, where it can improve the accuracy of the system. Some basic problems for the accuracy of bandgap References are discussed.

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References

  1. D.F. Hilbiber, “A new semiconductor voltage standard”, Dig. Techn. Papers, ISSCC, pp. 32–33, Feb. 1964.

    Google Scholar 

  2. R.J. Widlar, “New developments in IC voltage regulators”, IEEE J. Solid-State Circuits, vol. SC-6, pp. 2–7, Feb. 1971.

    Article  Google Scholar 

  3. K. van der Lingen and G.C.M. Meijer,“Temperature behaviour of bipolar transistors with a low base-doping”, research report TU Delft, The Netherlands, June 1994.

    Google Scholar 

  4. G.C.M. Meijer, “Integrated circuits and components for bandgap References and temperature transducers”, PhD thesis, TU Delft, The Netherlands, 1982.

    Google Scholar 

  5. J.W. Slotboom and H.C. de Graaff, “Measurements of bandgap narrowing in Si bipolar transistors”, Solid-State Electron., vol. 19, pp.857–862, Oct. 1976.

    Article  Google Scholar 

  6. Y.P. Tsividis, “Accurate analysis of the temperature effects in I c — V BE characteristics with application to bandgap reference sources”, IEEE J. Solid-State Circuits, vol. SC-15, pp. 1076–1084, Dec. 1980.

    Article  Google Scholar 

  7. A.P. Brokaw, “A simple three-terminal IC bandgap reference”, IEEE J. Solid-State Circuits, vol. SC-9, pp. 388–393, Dec 1974.

    Article  Google Scholar 

  8. G.C.M. Meijer and J.B. Verhoeff, “An integrated bandgap reference”, IEEE J. Solid-State Circuits, vol.-11, pp. 403–406, June 1976.

    Article  Google Scholar 

  9. R.J. Widlar, “Low-Volage Techniques”, IEEE J. Solid-State Circuits, vol. SC-13, pp. 838–846, Dec. 1978.

    Article  Google Scholar 

  10. G.C.M. Meijer, P.C. Schmale and K. van Zalinge, “A new curvature-corrected bandgap reference”, IEEE J. Solid-State Circuits, vol. SC-17, pp. 1139–1143, Dec. 1982.

    Article  Google Scholar 

  11. M. Gunawan, G.C.M. Meijer, J. Fonderie and J.H. Huysing, “A Curvature-corrected low-voltage bandgap reference”, IEEE J. Solid-State Circuits, vol. 28, pp. 667–670, June 1993.

    Article  Google Scholar 

  12. B. Song and P.R. Gray, “A precision curvature-compensated CMOS bandgap reference”, IEEE J. Solid-State Circuits, vol SC-18, pp. 634–643, Dec. 1983.

    Article  Google Scholar 

  13. I. Lee, G. Kim and W. Kim, “Exponential curvature-compensated BICMOS bandgap References”, IEEE J. Solid State-Circuits, vol. 29, pp. 1396–1403, Nov.1994.

    Article  Google Scholar 

  14. A. van Staveren, J. van Velzen, C.J.M. Verhoeven and A.H.M. van Roermund, “An integratable second-order compensated bandgap reference for 1 V supply”, to be published in: Analog Integrated Circuits and Signal processing, July 1995.

    Google Scholar 

  15. A. van Staveren, “A systematic design method for bandgap References”, Research Report, Delft University of Technology, March 1995.

    Google Scholar 

  16. C. Erdi, “A precision trim technique for monolithic analog circuits”, IEEE J. Solid-State Circuits, vol. SC-10, pp. 412–416, 1975.

    Article  Google Scholar 

  17. M. Martins, “CMOS shunt regulator with bandgap References for automotive environment”, IEEE Proc. Circuits Devices and Systems, vol. 141, pp. 157–161, June 1994.

    Article  Google Scholar 

  18. A.G. van Lienden, G.C.M. Meijer and J. van Drecht, “Latch-up in bipolar low-voltage current sources”, IEEE J. Solid-State Circuits, vol. SC-22, pp. 1139–1143, Dec. 1987.

    Article  Google Scholar 

  19. G. Tzanateas, C.A.T. Salama and Y.D. Tsividis, “A CMOS bandgap voltage reference”, IEEE J. Solid-State Circuits, SC-14, pp. 655–657, June 1979.

    Article  Google Scholar 

  20. H. Casier, Private communication, March 1995.

    Google Scholar 

  21. M.J.M. Pelgrom, A.C.J. Duinmaijer and A.P.G. Wellers, “Matching properties of MOS transistors”, IEEE J. Solid-State Circuits, vol. 24, pp. 1433–1440, October 1989.

    Article  Google Scholar 

  22. H. Casier, “BICMOS analog circuit design techniques”, Course on practical aspects in analog IC-design, EPFL-Lausanne, June 1992.

    Google Scholar 

  23. G.C.M. Meijer and A.W. van Herwaarden, “Thermal Sensors”, IOP publ., Bristol, 1994.

    Google Scholar 

  24. B. Puers and W.M.C. Sansen, “New mechanical sensors in silicon by mi-cromachining piezojunction transistors”, Proc. Transducers ’87, Tokyo, pp. 324–327, 1987.

    Google Scholar 

  25. Y. Kanda, “Effect of compressive stress on silicon bipolar devices”, J. Appl. Phys., vol. 44, pp. 389–394, 1973.

    Article  Google Scholar 

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, Netherlands

    Gerard C. M. Meijer

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  1. Gerard C. M. Meijer
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Editor information

Editors and Affiliations

  1. T.U. Delft, The Netherlands

    Johan H. Huijsing

  2. Philips Research Laboratories, Eindhoven University of Technology, The Netherlands

    Rudy J. van de Plassche

  3. K.U. Leuven, Heverlee, Belgium

    Willy M. C. Sansen

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© 1996 Springer Science+Business Media Dordrecht

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Meijer, G.C.M. (1996). Concepts for bandgap References and voltage measurement systems. In: Huijsing, J.H., van de Plassche, R.J., Sansen, W.M.C. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2462-2_13

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  • DOI: https://doi.org/10.1007/978-1-4757-2462-2_13

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-5157-1

  • Online ISBN: 978-1-4757-2462-2

  • eBook Packages: Springer Book Archive

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