Low-Noise HF Amplifiers

  • Zhong Yuan Chang

Abstract

This paper describes design techniques for low-noise HF amplifiers in bipolar and CMOS technologies for matching a reactive source. For both capacitive and inductive sources, general noise matching conditions are derived. The best noise performance obtainable by using bipolar and CMOS approaches are determined. Design examples and measurement results are presented which confirm the theoretical analyses.

Keywords

CMOS Technology Noise Performance Noise Contribution Input Transistor Equivalent Input 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Y. Netzer, “The design of low-noise amplifiers,” Proc IEEE, Vol. 69, No. 6, June 1981, pp. 728–741CrossRefGoogle Scholar
  2. [2]
    Y. Netzer, “A new interpretation of noise reduction by matching,” Proc IEEE, Vol. 62, March 1974, pp. 404–406CrossRefGoogle Scholar
  3. [3]
    A. Bilotti and E. Mariani, “Noise characteristics of current mirror sinks/sources,” IEEE J. Solid-State Circuits, Vol. SC-10, pp. 516–524, Dec. 1975CrossRefGoogle Scholar
  4. [4]
    Z.Y. Chang and W. Sansen, “Stability and noise performance of constant transimpedance amplifier with inductive source,” IEEE Trans. Circuits Syst., Vol. CAS-35, pp. 264–271, 1989MathSciNetCrossRefGoogle Scholar
  5. [5]
    G. Erdi, “Amplifier techniques for combining low noise, precision, and highspeed performance,” IEEE J. Solid-State Circuits, Vol. SC-16, pp. 653–661, Dec. 1981CrossRefGoogle Scholar
  6. [6]
    Z.Y. Chang and W. Sansen, Low noise wide band amplifiers in bipolar and CMOS technologies Kluwer Academic Publishers, 1991Google Scholar
  7. [7]
    H. Nyquist, “Thermal agitation of electric charge in conductors,” Phys Rev, 32, 1928, pp. 110–113CrossRefGoogle Scholar
  8. [8]
    A. Van der Ziel, “Thermal noise in field effect transistors,” Proc IRE, August 1962, pp. 1808–1812Google Scholar
  9. [9]
    A. G. Jordan and N. A. Jordan, “Theory of noise in metal oxide semiconductor devices,” IEEE Trans. Electron Devices, Vol. ED-12, No. 3, March 1965, pp. 148–156CrossRefGoogle Scholar
  10. [10]
    C. T. Sah, S. Y. Wu and F. H. Hielscher, “The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors,” IEEE Trans. Electron Devices, Vol. ED-13, No. 4, April 1966, pp. 410–414CrossRefGoogle Scholar
  11. [11]
    R. P. Jindal, “Noise associated with substrate current in fine line NMOS filed effect transistors,” IEEE Trans. Electron Devices, Vol. ED-32, No. 6, June 1985, pp. 1047–1052CrossRefGoogle Scholar
  12. [12]
    R. P. Jindal, “Hot electron effects on channel thermal noise in fine line NMOS field effect transistors,” IEEE Trans. Electron Devices, Vol. ED-33, No. 9, Sept 1986, pp. 1395–1397CrossRefGoogle Scholar
  13. [13]
    F. M. Klaassen and J. Prins, “Thermal noise of MOS transistors,” Philips Res. Repts 22, 1967, pp. 504–514Google Scholar
  14. [14]
    C. Huang and Van der Ziel, “Thermal noise in ion-implanted MOSFETS,” Solid-State Electronics, Vol.18, 1975, pp. 509–510CrossRefGoogle Scholar
  15. [15]
    P. S. Rao, “The effect of the substrate upon the gate and drain noise parameters of MOSFETS,” Solid-State Electronics, Vol.12, 1969, pp. 549–555 No. 12, Oct. 1984, pp. 1505–1509CrossRefGoogle Scholar
  16. [16]
    H. A. Haus et al, “Representation of noise in linear twoports,” Proc IRE, Vol. 48, Jan. 1960, pp. 69–74CrossRefGoogle Scholar
  17. [17]
    Z.Y. Chang and W. Sansen, “A low noise, low distortion CMOS AM wide-band amplifiers matching a capacitive source,” IEEE J. Solid-State Circuits, Vol. SC-23, No.3, June 1990, pp. 264–271Google Scholar
  18. [18]
    E.H. Nordholt, H.C. Nauta and C.A.M. Boon, “A high-dynamic-range front end for an upconversion car-radio receiver,” IEEE J. Solid-State Circuits, Vol. SC-20, No.3, June 1985, pp. 688 – 696CrossRefGoogle Scholar
  19. [19]
    Z.Y. Chang, W. Sansen and M. Steyaert, “High dynamic range radio receiver amplifier in BiCMOS technology”, Proc ESSCIRCVO Google Scholar
  20. [20]
    Robert. G. Meyer, Robert. A. “Blauschild, A wide band low-noise monolithic transimpedance amplifier,” IEEE J. Solid-state circuits, Vol. SC-21, No.4, pp. 530–533, Aug, 1986CrossRefGoogle Scholar
  21. [21]
    Kiichi Yamashita and et al,“ A variable transimpedance preamplifier for use in wide dynamic range optical receiver,” IEEE J. Solid-state circuits, Vol. SC-21, No. 2, pp. 324–329, April, 1986CrossRefGoogle Scholar
  22. [22]
    Z.Y. Chang and W. Sansen, “Influence of 1/f noise on the noise performance of CMOS wide band amplifiers with reactive sources,” Proc ICCAS’89 pp. 672–675Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1996

Authors and Affiliations

  • Zhong Yuan Chang
    • 1
  1. 1.Alcatel BellAntwerpBelgium

Personalised recommendations