Design Techniques for 1GHz Downconversion ICs Fabricated in a 1μm 13GHz BiCMOS Process

  • William D. Mack
  • Robert G. Meyer

Abstract

The integration of a low-noise amplifier (LNA) with a wide dynamic-range mixer has been accomplished by employing an advanced BiCMOS process. The LNA features a 2dB noise figure with 16dB of gain at 900MHz and is internally matched to 50 ohms. A through mode is implemented with a FET switch to handle large signals and save power. The amplifier is stabilized versus temperature and supply voltage. The mixer is a single-balanced common-base design to achieve wide dynamic range. The RF and LO ports are matched to 50 ohms and the IF port is high impedance to simplify matching to SAW IF filters. The input third-order intercept is +6dBm, which allows the downconverter to handle large interfering signals without affecting the receiver performance. The overall design is ESD protected by a new active clamping network, and the 1.31 × 1.16mm2 die fits in a 14 pin surface-mount package. A special shielding arrangement is used on chip in combination with coplanar circuit board layout to achieve 46dB of antenna isolation from the local oscillator. The overall supply current is 13mA from +5V.

Keywords

Surface Acoustic Wave Intermediate Frequency Human Body Model Bandgap Reference NMOS Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    J.L. DeJong, et.al., “Single polysilicon advanced super high-speed BICMOS technology,” IEEE Proceedings of the Bipolar Circuits and Technology Meeting, Sept. 1989.Google Scholar
  2. [2]
    R. Milsom, et.al., “FACET - a CAE system for RF analogue simulation including layout”, 1987 IEEE Design Automation Conference.Google Scholar
  3. [3]
    C. Hull, “Analysis and optimization of monolithic RF downconversion receivers”, Phd. Dissertation, University of California, Berkeley, 1992.Google Scholar
  4. [4]
    Y. Fong and C. Hu, “The Effects of high electric field transients on thin gate oxide MOSFETs,” 1987 EOS/ESD Symposium.Google Scholar
  5. [5]
    W. Mack and R. Lane, “Protection device utilizing one or more subsurface diodes and associated method of manufacture, ” U.S. patent 4,736, 271, Apr. 1988.Google Scholar
  6. [6]
    W. Mack and R. Meyer, “New ESD protection schemes for BiCMOS processes with application to cellular radio designs,” IEEE Circuits and Systems Conference, May 1992.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1994

Authors and Affiliations

  • William D. Mack
    • 1
  • Robert G. Meyer
    • 1
  1. 1.Philips Semiconductors — Communications Products GroupSunnyvaleUSA

Personalised recommendations