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Single Charge Tunneling pp 21–107Cite as

Charge Tunneling Rates in Ultrasmall Junctions

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Part of the book series: NATO ASI Series ((NSSB,volume 294))

Abstract

With the advances of microfabrication techniques in recent years it has become possible to fabricate tunnel junctions of increasingly smaller dimensions and thereby decreasing capacitance C. Nowadays one can study tunnel junctions in a regime where the charging energy E c = e2/2C is larger than the thermal energy k B T. Then charging effects play an important role and this has been the subject of a by now large body of both theoretical and experimental work.

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Author information

Authors and Affiliations

  1. Fachbereich Physik, Universität-GH Essen, 4300, Essen, Germany

    Gert-Ludwig Ingold

  2. Nuclear Physics Institute, Moscow State University, Moscow, 119899 GSP, USSR

    Yu. V. Nazarov

Authors
  1. Gert-Ludwig Ingold
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  2. Yu. V. Nazarov
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Editor information

Editors and Affiliations

  1. Universität Essen, Essen, Germany

    Hermann Grabert

  2. Centre d’Etudes de Saclay, Gif-sur-Yvette, France

    Michel H. Devoret

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© 1992 Springer Science+Business Media New York

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Ingold, GL., Nazarov, Y.V. (1992). Charge Tunneling Rates in Ultrasmall Junctions. In: Grabert, H., Devoret, M.H. (eds) Single Charge Tunneling. NATO ASI Series, vol 294. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2166-9_2

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  • DOI: https://doi.org/10.1007/978-1-4757-2166-9_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-2168-3

  • Online ISBN: 978-1-4757-2166-9

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