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Distortion Generation with Source Resistance and Nonlinear Beta

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Analog Integrated Circuits for Communication

Abstract

For a basic MOS stage, whether’ single-ended’ or differential, the input resistance at low frequencies is extremely large because of the insulated-gate structure of the device. Therefore, the presence of a finite resistance of a signal source has no effect on the performance of the stage. Only at very high frequencies is there an interaction between the signal source and the input capacitance.

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© 1991 Springer Science+Business Media New York

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Pederson, D.O., Mayaram, K. (1991). Distortion Generation with Source Resistance and Nonlinear Beta. In: Analog Integrated Circuits for Communication. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2128-7_3

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  • DOI: https://doi.org/10.1007/978-1-4757-2128-7_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-2130-0

  • Online ISBN: 978-1-4757-2128-7

  • eBook Packages: Springer Book Archive

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