A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators
The implementation of semiconductor device simulators requires selections from the hierarchy of charge transport models (see, e.g. ). The choices involve tradeoffs between physical accuracy, computational costs, and implementation difficulty. This paper presents a new transport model that includes overshoot effects within the framework of a conventional drift-diffusion approach, thereby providing an attractive combination of physical accuracy and numerical efficiency. The new model is a generalized formulation of augmented drift-diffusion.
KeywordsGallium Arsenide Indium Phosphide Drift Diffusion Physical Accuracy Momentum Relaxation Time
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