A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators

  • P. A. Blakey
  • X. L. Wang
  • C. M. Maziar
  • P. A. Sandborn
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The implementation of semiconductor device simulators requires selections from the hierarchy of charge transport models (see, e.g. [1]). The choices involve tradeoffs between physical accuracy, computational costs, and implementation difficulty. This paper presents a new transport model that includes overshoot effects within the framework of a conventional drift-diffusion approach, thereby providing an attractive combination of physical accuracy and numerical efficiency. The new model is a generalized formulation of augmented drift-diffusion.

Keywords

Gallium Arsenide Indium Phosphide Drift Diffusion Physical Accuracy Momentum Relaxation Time 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • P. A. Blakey
    • 1
  • X. L. Wang
    • 2
  • C. M. Maziar
    • 2
  • P. A. Sandborn
    • 3
  1. 1.Motorola APRDL, MD: K-10AustinUSA
  2. 2.Microelectronics Research CenterThe University of Texas at AustinAustinUSA
  3. 3.MCC Packaging and Interconnect ProgramAustinUSA

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