The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot

  • Edwin C. Kan
  • Umberto Ravaioli
  • Thomas Kerkhoven
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)


Device simulation using the drift-diffusion (DD) model has many advantages over other more complex and time-consuming methods. However, in submi-cron devices, nonstationary effects such as velocity overshoot must be included to predict device behavior accurately. We have successfully used an augmented current equation[I] to analyze submicron device characteristics. Comparisons with the Monte-Carlo (MC) method and the Hydrodynamic (HD) model are briefly examined on a test structure. Also, a hierarchical, easy-to-update DD device simulator OSMOSIS (Over-Shoot Modeling Of Semiconductor Structures) is developed not only for the augmented current equation, but also for more general use in the future.


Test Structure Computational Electronics Boltzmann Transport Equation Current Equation Velocity Overshoot 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Edwin C. Kan
    • 1
  • Umberto Ravaioli
    • 1
  • Thomas Kerkhoven
    • 2
  1. 1.Beckman Institute and the Coordinated Science LaboratoryUSA
  2. 2.Department of Computer ScienceUniversity of Illinois at Urbana-ChampaignUrbanaUSA

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