A Numerical Large Signal Model for the Heterojunction Bipolar Transistor

  • Douglas A. Teeter
  • Jack R. East
  • Richard K. Mains
  • George I. Haddad
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)


This model is intended to simulate the large signal performance of HBT‘s for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.


Electron Temperature Terminal Voltage Heterojunction Bipolar Transistor Collector Voltage Valley Conduction Band 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Douglas A. Teeter
  • Jack R. East
  • Richard K. Mains
  • George I. Haddad

There are no affiliations available

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