Exchange Energy Interactions in Quantum Well Heterostructures
The influence of the exchange energy interaction on electronic subbands in a square well potential is investigated using a Kohn-Sham density functional approach. We concentrate on a layered AlGaAs/GaAs/AlGaAs system, the properties of which are observed as a function of well width, at absolute zero. Previous studies on exchange energy effects in quasi-2D (two dimensional) electron systems often use a local density functional formalism (Stern and Sarma, 1984) or, alternatively, the Slater approximation (Vx(r)elater≈ n(r)1/3) (Kaminskii, 1989). We, on the other hand, apply a recently proposed effective exchange potential Vx(z) (Krieger and others, 1990: see equation 3). The properties of Vx(z) make it interesting for future applications to heterojunction device simulations.
KeywordsGaAs Layer Slater Approximation Subband Energy Single Electron Tunneling Electronic Subbands
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- Kaminskii V.E. (1989), Soviet Physics of Semiconductors, 23(4), 414.Google Scholar
- Krieger, J. B., Li, Y., Iafrate, G.J., (1990), Bull APS 35, 823.Google Scholar
- Krieger, J. B., Li, Y., Iafrate, G.J., (1990), (to appear in Physics Letters)Google Scholar
- Perdew, J.(1985) in Density Functional Methods in Physics, ed. Dreizier and Providencia, NATO ASI Series, 265.Google Scholar