Abstract
The influence of the exchange energy interaction on electronic subbands in a square well potential is investigated using a Kohn-Sham density functional approach. We concentrate on a layered AlGaAs/GaAs/AlGaAs system, the properties of which are observed as a function of well width, at absolute zero. Previous studies on exchange energy effects in quasi-2D (two dimensional) electron systems often use a local density functional formalism (Stern and Sarma, 1984) or, alternatively, the Slater approximation (Vx(r)elater≈ n(r)1/3) (Kaminskii, 1989). We, on the other hand, apply a recently proposed effective exchange potential Vx(z) (Krieger and others, 1990: see equation 3). The properties of Vx(z) make it interesting for future applications to heterojunction device simulations.
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References
Chow, P. C. (1972), American Journal of Physics, 40, 730.
Kaminskii V.E. (1989), Soviet Physics of Semiconductors, 23(4), 414.
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Krieger, J. B., Li, Y., Iafrate, G.J., (1990), (to appear in Physics Letters)
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© 1991 Springer Science+Business Media New York
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Guerrero, A.H. (1991). Exchange Energy Interactions in Quantum Well Heterostructures. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_51
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_51
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