Modeling InAs/GaSb/AlSb interband tunnel structures

  • D. Z.-Y. Ting
  • E. T. Yu
  • D. A. Collins
  • D. H. Chow
  • T. C. McGill
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

We have implemented a simple model that allows realistic yet rapid simulation of conventional as well as interband resonant tunneling devices. Using this model we have studied InAs-GaSb-InAs broken-gap interband transmission devices and found that, despite the absence of classically forbidden barrier regions, a resonant tunneling process is involved in producing the observed negative differential resistance. Furthermore, we have found that maximum peak current densities should be found in devices with GaSb layer thicknesses corresponding to a single, rather than multiple, transmission resonance peak in the broken-gap region.

Keywords

Transmission Coefficient Resonant Tunneling Peak Current Density Doping Profile Valence Band Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • D. Z.-Y. Ting
    • 1
  • E. T. Yu
    • 1
  • D. A. Collins
    • 1
  • D. H. Chow
    • 1
  • T. C. McGill
    • 1
  1. 1.Thomas J. Watson, Sr. Laboratory of Applied PhysicsCalifornia Institute of TechnologyPasadenaUSA

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