Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices
We performed Monte Carlo simulations taking into account all scattering mechanisms in InP and the presence of an inhomogeneous electric field. We report that: 1) the drifted Maxwellian distribution used in many publications is reliable only for long samples; 2) in addition to the boundary conditions at the cathode, the anode boundary condition becomes important in short devices; 3) Negative Differential Energy (NDE) occurs in the Negative Differential Conductivity (NDC) regime in InP (i.e. cooling of the electron gas by the electric field take place) ; 4) the critical electric field for NDE is somewhat higher than the critical electric field for NDC.
KeywordsElectron Kinetic Energy Negative Differential Conductivity Device Length Perform Monte Carlo Simulation Critical Electric Field
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