Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators

  • Christopher H. Lee
  • Umberto Ravaioli
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

We have performed self-consistent ensemble Monte Carlo simulations of GaAs Gunn oscillators to understand how the heterojunction cathode affects the RF performance. We compare two heterojunction cathode oscillators (x=0.23 and z=0.33) to the notch oscillator. We find that the dead zone corresponding to x=0.33 is significantly lower, but this reduction does not produce a corresponding improvement in RF performance relative to the notch oscillator. Moreover, the domain is able to mature so we observe a traveling dipole layer. When the Al mole fraction is decreased to 0.23, we find that the length of the dead zone is almost equal to the notch oscillator and the RF performance is comparable to the notch oscillator. Also, the domain is in the translt accumulation mode, similar to the notch oscillator.

Keywords

Dead Zone Particle Current Gunn Diode Tank Circuit Ensemble Monte Carlo 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Christopher H. Lee
    • 1
  • Umberto Ravaioli
    • 1
  1. 1.Beckman Institute and Coordinated Science LaboratoryUniversity of Illinois at Urbana-ChampaignUrbanaUSA

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