Numerical Study of High Field Transport in SiO2 with Traps: A Coupled Monte Carlo and Rate Equation Model
The physical problem addressed in this paper is that of hot electron transport in silicon dioxide with traps. A rate equation model solved self consistently [1,2] has previously been shown to agree well with experimental data for the flat band voltage shift in silicon dioxide. This dynamic trapping and detrapping model contains an empirical detrapping cross section. By using a Monte Carlo algorithm to calculate a microscopic local detrapping cross section, an improved version of the self consistent rate equation model is obtained.
KeywordsMonte Carlo Algorithm Monte Carlo Model Computational Electronics Polar Optical Phonon Flat Band Voltage
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