Abstract
We describe a new approach for simulating carrier transport in semiconductor devices using scattering matrices. In the new approach, a device is viewed as a combination of semiconductor slabs, and carrier transport across each slab is characterized by a scattering matrix. Device simulation consists of combining scattering matrices for individual slabs that comprise the device. The ability of the scattering matrix approach to treat off-equilibrium effects in modern devices is demonstrated by simulating model device structure.
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References
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© 1991 Springer Science+Business Media New York
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Das, A., Lundstrom, M.S. (1991). Simulation of non-stationary electron transport using scattering matrices. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_31
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_31
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5122-9
Online ISBN: 978-1-4757-2124-9
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