J-V Characteristics of Graded AlxGa1-xAs Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method
The properties of graded AlxGa1-xAs heterojunction barriers are investigated using the self consistent ensemble Monte Carlo method. The effect of barrier height and doping is determined by considering barrier heights of 100 meV and 265 meV, and doping levels in the barrier of 1 x 1015 cm -3 and 1 x 1017 cm -3. The lower doped barrier is shown to result in a smaller current both in the forward and reverse bias regions due to space charge effects. The barrier doping provides a mechanism by which the ideality factor of the barrier diode can be changed whereas the barrier height provides a mechanism by which the saturation current can be controlled effectively.
KeywordsBarrier Height Ideality Factor Barrier Region Space Charge Effect Barrier Thickness
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