Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods
Numerical simulations of a submicron GaAs FET have been performed using both Monte Carlo (MC) methods and the Moments of the Boltzmann Transport Equation (MBTE). The I–V characteristics as well as details of the internal distribution of carriers and potential were obtained. The MC calculations show no regions or negative forward conductance. However, the MBTE results show that negative forward conductance can be present or absent depending on the value of the thermal conductivity.
KeywordsMonte Carlo Monte Carlo Calculation Gate Bias Computational Electronics Monte Carlo Result
Unable to display preview. Download preview PDF.
- 2.H. L. Grubin, D. K. Ferry, G. J. Iafrate and J. R. Barker, VLSI Electronics, 3, (1982).Google Scholar
- 3.W. R. Briley and H. McDonald, J. Comp. Phys. (1980).Google Scholar
- 4.J. P. Kreskovsky and H. L. Grubin, J. Comp. Phys. (1987).Google Scholar
- 5.J. P. Kreskovsky, M. Meyyappan and H. L. Grubin, NUMOS I, (1986).Google Scholar