Field Assisted Impact Ionization in Semiconductors

  • J. Bude
  • K. Hess
  • G. J. Iafrate
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

We present a theory of the inverse Auger process (Impact Ionization) in semiconductors which expands an earlier theory of Kane and includes the effects of high electric fields on the electron-electron interaction. We show that this intracollisional field effect leads to a dramatic softening of the threshold energy for impact ionization.

Keywords

Impact Ionization High Electric Field Ionization Rate Auger Process Valence Band Electron 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • J. Bude
    • 1
  • K. Hess
    • 1
  • G. J. Iafrate
    • 2
  1. 1.Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUSA
  2. 2.US Army Research OfficeResearch Triangle ParkUSA

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