Field Assisted Impact Ionization in Semiconductors

  • J. Bude
  • K. Hess
  • G. J. Iafrate
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)


We present a theory of the inverse Auger process (Impact Ionization) in semiconductors which expands an earlier theory of Kane and includes the effects of high electric fields on the electron-electron interaction. We show that this intracollisional field effect leads to a dramatic softening of the threshold energy for impact ionization.


Impact Ionization High Electric Field Ionization Rate Auger Process Valence Band Electron 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • J. Bude
    • 1
  • K. Hess
    • 1
  • G. J. Iafrate
    • 2
  1. 1.Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUSA
  2. 2.US Army Research OfficeResearch Triangle ParkUSA

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