Computer Experiments for High Electron Mobility Transistors and Avalanching Devices
The use of “computer experiments” to invent/ understand, or optimize semiconductor electronic devices is becoming increasingly important as the feature lengths of semiconductor devices approach the nanometer range. In such small device structures, highly nonlinear effects are known to arise, greatly complicating the description of these devices. The most general modeling approach entails numerical methods which are typically highly computationally intensive. We present a “computer experimental procedure” for modeling very small feature length devices which emphasize the use of built-in controls and an hierarchical approach. As a means of illustrating the usefulness of this technique, we present a series of calculations for both APDs and HEMTs.
KeywordsGate Length Device Geometry Electron Simulation Excess Noise Factor General Modeling Approach
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