Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors
The ensemble Monte Carlo technique has become useful as a computational tool for simulating the excitation of electron-hole plasmas in semiconductors. In this paper, the use of this tool for the short-time regime is discussed. Here, the Coulomb interaction between electrons is simulated by a real-space molecular dynamics approach. The inclusion of the exchange interaction and finite collision duration is also discussed.
KeywordsTransition Rate Fermi Golden Rule Ensemble Monte Carlo Femtosecond Laser Excitation Intervalley Transition
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