Device Simulation Augmented by the Monte Carlo Method
This paper describes applications which combine Monte Carlo methods with other techniques to model semiconductor devices. These procedures can produce more effective means to describe the behavior of device structures requiring detailed physical descriptions and increased computational efficiency. Applications presented in this paper include: (a) simulation of transport across hetero-barriers with quasi-ballistic effects; (b) simulation of metal-semiconductor-metal photodetectors in which parasitic circuit effects are important; and (c) generation of transport parameters for use in drift-diffusion (and hydrodynamic) models while negating assumptions about the nature of the particle velocity distribution function.
KeywordsBarrier Height Velocity Distribution Function Boltzmann Transport Equation Contact Finger Discrete Device
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- 1.T. Kurosawa, J. Phys. Soc. Jpn. Suppl., 21, p. 424, 1966.Google Scholar
- 6.J. Pelouard, et al., NASECODE VI, p. 255, 1989, Boole Press, Dublin.Google Scholar
- 7.A. Levi and S. Schmitt-Rink, Nanostructure Physics and Fabrication, p. 221, 1989, Academic Press, New York.Google Scholar