Abstract
This paper describes applications which combine Monte Carlo methods with other techniques to model semiconductor devices. These procedures can produce more effective means to describe the behavior of device structures requiring detailed physical descriptions and increased computational efficiency. Applications presented in this paper include: (a) simulation of transport across hetero-barriers with quasi-ballistic effects; (b) simulation of metal-semiconductor-metal photodetectors in which parasitic circuit effects are important; and (c) generation of transport parameters for use in drift-diffusion (and hydrodynamic) models while negating assumptions about the nature of the particle velocity distribution function.
This work was supported by the Office of Naval Research, Arlington, VA.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
Reference
T. Kurosawa, J. Phys. Soc. Jpn. Suppl., 21, p. 424, 1966.
W. Fawcett, A. Boardman, S. Swain, J. Phys. Chem. Solids, 21, p. 1963, 1970.
C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, p. 645, 1983.
M. Fischetti and S. Laux, Phys. Rev. B., 38, p. 9721, 1988.
J. Pelouard and M. Littlejohn, SPIE Proceedings, 1144. p. 582, 1989.
J. Pelouard, et al., NASECODE VI, p. 255, 1989, Boole Press, Dublin.
A. Levi and S. Schmitt-Rink, Nanostructure Physics and Fabrication, p. 221, 1989, Academic Press, New York.
K. Hess and G. Iafrate, Proc. IEEE, 76, p. 519, 1988.
B. J. VanZeghbroeck, et. al., IEEE Electron. Dev. Lett., 9, p. 527, 1988.
W. Koscielniak, et. al., IEEE Phot. Tech. Lett., 2, p. 125, 1990.
D. Woolard, et. al., Solid-State Elect., 32, p. 1347, 1989.
D. Woolard, et. al., Solid-State Elect., 31, p. 571, 1988.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer Science+Business Media New York
About this chapter
Cite this chapter
Littlejohn, M.A., Pelouard, J.L., Koscielniak, W.C., Woolard, D.L. (1991). Device Simulation Augmented by the Monte Carlo Method. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_13
Download citation
DOI: https://doi.org/10.1007/978-1-4757-2124-9_13
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5122-9
Online ISBN: 978-1-4757-2124-9
eBook Packages: Springer Book Archive