Abstract
SOI MOSFETs present several properties which allow them to operate in harsh environments where bulk devices would typically fail from operating satisfactorily. These interesting properties of the SOI MOSFETs are due to the small volume of silicon in which the devices are made, to the small area of the source-body and drain-body junctions, and to the presence of a back gate. In this Chapter, we will describe the behavior of the SOI MOSFET operating in three cases of extreme environments: the exposure to radiations, to high temperatures and to low (cryogenic) temperatures.
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Colinge, JP. (1991). The SOI MOSFET Operating in a Harsh Environment. In: Silicon-on-Insulator Technology. The Springer International Series in Engineering and Computer Science, vol 132. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2121-8_7
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DOI: https://doi.org/10.1007/978-1-4757-2121-8_7
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