Abstract
Although CMOS remains the most obvious field of application for SOI, the ease of processing SOI substrates, the full dielectric isolation of the devices and the possibility of using a back gate have sparked a large research activity in the field of novel SOI devices. Indeed, different novel bipolar and MOS structures have been proposed such as gated diode structures, lateral bipolar and bipolar-MOS devices, vertical bipolar transistors with back gate-induced collector, high-voltage lateral devices of various kinds and double gate MOS devices. This Chapter will review these devices, qualitatively explain their physics and explore their possible fields of application. It will also describe some devices (other than the MOSFET) which have been adapted from bulk to SOI technology.
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Colinge, JP. (1991). Other SOI Devices. In: Silicon-on-Insulator Technology. The Springer International Series in Engineering and Computer Science, vol 132. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2121-8_6
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DOI: https://doi.org/10.1007/978-1-4757-2121-8_6
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