Skip to main content
SpringerLink
Log in

The SOI MOSFET

  • Chapter
Silicon-on-Insulator Technology

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 132))

Abstract

Although most types of devices can be fabricated in SOI films, the preferred application field for Silicon-on-Insulator technology is undeniably CMOS. Other types of devices (bipolar devices, COMFETs, novel devices) will be reviewed in Chapter 6. SOI MOSFETs exhibit interesting properties which make them particularly attractive for applications such as rad-hard circuits, deep-submicron devices and high-temperature electronics. The properties of the SOI MOSFET operating in a harsh environment will be described in Chapter 7.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Bibliography

  1. D. Flandre and F. Van de Wiele, Proc. of the IEEE SOS/SOI Technology Conference, p. 27, 1989

    Google Scholar 

  2. N.J. Thomas and J.R. Davis, Proc. of the IEEE SOS/SOI Technology Conference, p. 130, 1989

    Google Scholar 

  3. see, for example, S.M. Sze, Physics of Semiconductor Devices 2nd Ed., New York: J. Wiley and Sons, 1981

    Google Scholar 

  4. H.K. Lim and J.G. Fossum, IEEE Trans. on Electron Devices, Vol. 30, p. 1244, 1983

    Article  Google Scholar 

  5. J.P. Colinge, IEEE Electron Device Lett., Vol. 6, p. 573, 1985

    Article  Google Scholar 

  6. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, J. Wiley and Sons, p. 436, 1986

    Google Scholar 

  7. J. Witfield and S. Thomas, IEEE Electron Dev. Lett., Vol. 7, p. 347, 1986

    Article  Google Scholar 

  8. J.P. Colinge, Microelectronic Engineering, Vol. 8, p. 127, 1988

    Article  Google Scholar 

  9. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits J. Wiley and Sons, p. 487, 1986

    Google Scholar 

  10. S.Veeraraghavan and J.G. Fossum, IEEE Trans. on Electron Devices, Vol. 35, p. 1866, 1988

    Article  Google Scholar 

  11. T.W. MacElwee and D.I. Calder, Proceedings of the second international Symposium on Ultra Large Scale Integration Science and Technology, Ed. by C.M. Osbum and J.M. Andrews, Vol. 89–9, The Electrochemical Society, p. 693, 1989, and T.W. MacElwee and I.D. Calder, Proceedings IEEE SOS/SOI Technology Conference, p. 171, 1989

    Google Scholar 

  12. J.P. Colinge, Techn. Digest of International Electron Devices Meeting (IEDM), p. 817, 1989

    Google Scholar 

  13. J.G. Fossum, Proceedings of the fourth international Symposium on Siliconon-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society, p. 491, 1990

    Google Scholar 

  14. T. Sekigawa and Y. Hayashi, Solid-State Electron., Vol. 27, pp. 827, 1984

    Article  Google Scholar 

  15. D. Hisamoto, T. Kaga, Y. Kawamoto, and E. Takeda, Techn. Digest of International Electron Devices Meeting (IEDM), p. 833, 1989

    Google Scholar 

  16. S.Veeraraghavan and J.G. Fossum, IEEE Trans. on Electron Devices, Vol. 36, p. 522, 1989

    Google Scholar 

  17. H.K. Lim and J.G. Fossum, IEEE Trans. on Electron Devices, Vol. 31, p. 401, 1984

    Article  Google Scholar 

  18. H.K. Lim and J.G. Fossum, IEEE Trans.Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53 on Electron Devices, Vol. 32, p. 446, 1985

    Article  Google Scholar 

  19. R.J. Van Overstraeten, G.J. Declerck, and P.A. Muls, IEEE Trans. Electron Devices, Vol. ED-20, p. 1150, 1973, and S.M. Sze, Physics of Semiconductor Devices, Wiley and Sons, p. 446, 1981

    Google Scholar 

  20. D.J. Wouters, J.P. Colinge, and H.E. Maes, IEEE Trans. Electron Devices, Vol. ED-37, p. 2022, 1990

    Google Scholar 

  21. J.P. Colinge, IEEE Electron Device Leti.,Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53 Vol. EDL-7, p. 244, 1986

    Google Scholar 

  22. J.P. Cotinge, Ext. Abstracts of 5th Internat. Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 105, 1988

    Google Scholar 

  23. K.Asada, H. Miki, M. Kumon, and T. Sugano, Ext. Abstracts of 8th Internat. Workshop on Future Electron Devices, Kochi, Japan, p. 165, 1990

    Google Scholar 

  24. S.C. Sun and J.D. Plummer, IEEE Trans. on Electron Devices, Vol. 27, pp. 1497, 1980

    Article  Google Scholar 

  25. M. Yoshimi, H. Hazama, M. Takahashi, S. Kambayashi, T. Wada, K. Kato, and H. Tango, IEEE Trans. on Electron Devices, Vol. 36, pp. 493, 1989

    Article  Google Scholar 

  26. A. Yoshino, Proceedings of the fourth international Symposium on Siliconon-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society, p. 544, 1990

    Google Scholar 

  27. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, IEEE Electron Device Lett., Vol. 8, pp. 410, 1987

    Article  Google Scholar 

  28. J.C. Sturm, Silicon-on-Insulator and Buried Metals in Semiconductors, MRS Symp. Proc., Ed. by J.C. Sturm, C.K. Chen, L. Pfeiffer, and P.L.F. Hemment, Vol.107, p. 295, 1988,and J.C. Sturm, K. Tokunaga, and J.P. Colinge, IEEE Electron Device Letters, Vol. 9, p. 460, 1988

    Google Scholar 

  29. J.C. Sturm and K. Tokunaga, Electronics Letters,Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53 Vol. 25, p. 1233, 1989

    Article  Google Scholar 

  30. J.G. Fossum, J.Y. Choi, and R. Sundaresan, IEEE Trans. on Electron Devices, Vol. 37, p. 724, 1990

    Article  Google Scholar 

  31. P. Antognetti and G. Massobrio, Semiconductor Device Modeling with Spice, McGraw-Hill, p. 185, 1988

    Google Scholar 

  32. B. Dierickx, L. Warmerdam, E. Simoen, J. Vermeiren, and C. Claeys, IEEE Trans. on Electron Devices, Vol. 35, p. 1120, 1988

    Article  Google Scholar 

  33. J. Tihanyi and H Schlötterer, IEEE Trans. on. Electron Devices, Vol. 22, p. 1017, 1975

    Article  Google Scholar 

  34. G. Merckel, Nato Course on Process and Device Modeling for Integrated Circuit Design, Ed. by F. Van de Wiele, W. Engl and P. Jespers, Groningen, The Netherlands, Noordhoff, p. 725, 1977

    Google Scholar 

  35. J.P. Colinge, IEEE Electron Device Lett., Vol. 9, p. 97, 1988

    Article  Google Scholar 

  36. K.M. Cham, S.Y. Oh, D. Chin, and J.L. Moll, Computer Aided Design and VLSI Device Development, Hingham, MA, Kluwer Academic Publishers, p. 240, 1986

    Google Scholar 

  37. P.K. Ko, S. Tam, C. Hu, S.S. Wong, and C.G. Sodini, Techn. Digest of International Electron Devices Meeting (IEDM), p. 88, 1984

    Google Scholar 

  38. C. Hu, Techn. Digest of International Electron Devices Meeting (IEDM), p. 176, 1983

    Google Scholar 

  39. C.Hu, S.C. Tam, F.C. Hsu, P.K. Ko, T.Y. Chan, and T.W. Terrill, IEEE Trans. on. Electron Devices, Vol. 32, p. 375, 1985

    Google Scholar 

  40. J.P. Colinge, IEEE Trans. on Electron Devices, Vol. 34, p. 2173, 1987

    Article  Google Scholar 

  41. J.R. Davis, A.E. Glaccum, K. Reeson, and P.L.F. Hemment, IEEE Electron Device Letters, Vol. 7, p. 570, 1986

    Article  Google Scholar 

  42. J.Y. Choi and J.G. Fossum, Proceedings IEEE SOS/SOI Technology Conference, p. 21, 1990

    Google Scholar 

  43. C.E.D. Chen, M. Matloubian, R. Sundaresan, B.Y. Mao, C.C. Wei, and G.P. Pollack, IEEE Electron Device Letters, Vol. 9, p. 636, 1988

    Article  Google Scholar 

  44. R. Sundaresan and C.E.D. Chen, Proceedings of the fourth international Symposium on Silicon-on-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society,Meth. in Phys. Research,Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceeding p. 455, 1990

    Google Scholar 

  45. A.J. Auberton-Hervé, Proceedings of the fourth international Symposium on Silicon-on-Insulator Technology and Devices, ed. by D.N. Schmidt, Vol. 90–6, The Electrochemical Society, p. 544, 1990

    Google Scholar 

  46. H.S. Sheng, S.S. Li, R.M. Fox, and W.S. Krull, IEEE Trans. on Electron Devices, Vol. 36, no. 3, p. 488, 1989

    Article  Google Scholar 

  47. Grove, A.S., Physics and Technology of Semiconductor Devices, J. Wiley and Sons, pp. 230, 1967

    Google Scholar 

  48. M. Haond and J.P. Colinge, Electronics Letters, Vol. 25, p. 1640, 1989

    Article  Google Scholar 

  49. K.K. Young and J.A. Burns, IEEE Transactions on Electron Devices, Vol. 35,Meth. in Phys. Research,Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceeding p. 426, 1988

    Article  Google Scholar 

  50. J.P. Colinge, IEEE Trans. on Electron Devices, Vol. 37, p. 718, 1990

    Article  Google Scholar 

  51. D.P. Vu, A. Chantre, D. Ronzani, and J.C. Pfister, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 357, 1986

    Google Scholar 

  52. Grove, A.S., Physics and Technology of Semiconductor Devices, J. Wiley and Sons,Meth. in Phys. Research,Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM),Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel“Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceeding pp. 326, 1967

    Google Scholar 

  53. J.G. Fossum, R. Sundaresan, and M. Matloubian, IEEE Transactions on Electron Devices, Vol. 8, p. 544, 1987

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. IMEC, Belgium

    Jean-Pierre Colinge

Authors
  1. Jean-Pierre Colinge
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1991 Springer Science+Business Media New York

About this chapter

Cite this chapter

Colinge, JP. (1991). The SOI MOSFET. In: Silicon-on-Insulator Technology. The Springer International Series in Engineering and Computer Science, vol 132. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2121-8_5

Download citation

  • DOI: https://doi.org/10.1007/978-1-4757-2121-8_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-2123-2

  • Online ISBN: 978-1-4757-2121-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation