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SOI Materials Characterization

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Silicon-on-Insulator Technology

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 132))

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Abstract

Once Silicon-On-Insulator material has been produced, it is important to characterize it in terms of quality. The most critical parameters are the defect density, the thickness of both the top silicon layer and the buried insulator, the concentration of impurities, the carrier lifetime, and the quality of the silicon-insulator interfaces.

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Authors and Affiliations

  1. IMEC, Belgium

    Jean-Pierre Colinge

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  1. Jean-Pierre Colinge
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© 1991 Springer Science+Business Media New York

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Colinge, JP. (1991). SOI Materials Characterization. In: Silicon-on-Insulator Technology. The Springer International Series in Engineering and Computer Science, vol 132. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2121-8_3

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  • DOI: https://doi.org/10.1007/978-1-4757-2121-8_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-2123-2

  • Online ISBN: 978-1-4757-2121-8

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