SOI Materials Characterization

  • Jean-Pierre Colinge
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 132)

Abstract

Once Silicon-On-Insulator material has been produced, it is important to characterize it in terms of quality. The most critical parameters are the defect density, the thickness of both the top silicon layer and the buried insulator, the concentration of impurities, the carrier lifetime, and the quality of the silicon-insulator interfaces.

Keywords

Grain Boundary Minority Carrier Silicon Film Spectroscopic Ellipsometry Film Thickness Measurement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.IMECBelgium

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