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Silicon-on-Insulator Technology pp 7–54Cite as

SOI Materials

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Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 132))

Abstract

Many techniques have been developed for producing a film of single-crystal silicon on top of an insulator. Some of them are based on the epitaxial growth of silicon on either a silicon wafer covered with an insulator (homoepitaxial techniques) or on a crystalline insulator (heteroepitaxial techniques). Other techniques are based on the crystallization of a thin silicon layer from the melt (laser recrystallization, e-beam recrystallization and zone-melting recrystallization). Silicon-on-insulator material can also be produced from a bulk silicon wafer by isolating a thin silicon layer from the substrate through the formation and oxidation of porous silicon (FIPOS) or through the ion beam synthesis of a buried insulator layer (SIMOX, SIMNI and SIMON). Finally, SOI material can be obtained by thinning a silicon wafer bonded to an insulator and a mechanical substrate (wafer bonding). Every approach has its advantages and its pitfalls, and the type of application to which the SOI material is destined dictates the material to be used in each particular case. SIMOX, for instance, seems to be an ideal candidate for VLSI and rad-hard applications, wafer bonding is more adapted to bipolar and power applications, while laser recrystallization is the main contender for the fabrication of 3D integrated circuits. This Chapter will review the different techniques used for producing SOI material.

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    Jean-Pierre Colinge

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Colinge, JP. (1991). SOI Materials. In: Silicon-on-Insulator Technology. The Springer International Series in Engineering and Computer Science, vol 132. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2121-8_2

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