BiCMOS Standard Memories

  • H. V. Tran
  • P. K. Fung
  • D. B. Scott
  • A. H. Shah
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 76)

Abstract

Over the past few years, memory performance has been the primary demonstration vehicle for BiCMOS technologies. Intrinsic gate delay, power dissipation and area have been regarded as the theoretical indications for technology performance and density. In a similar manner memory access time, memory power dissipation and memory size have been regarded as the practical indications of technology performance and density. Against this empirical yard stick BiCMOS technology has been found to produce memories with MOS-like power and density but with speeds and I/O interfaces which one normally attributes to bipolar memories.

Keywords

Bipolar Transistor Differential Amplifier Input Buffer Voltage Swing CMOS Inverter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1990

Authors and Affiliations

  • H. V. Tran
    • 1
  • P. K. Fung
    • 1
  • D. B. Scott
    • 1
  • A. H. Shah
    • 1
  1. 1.Texas Instruments IncorporatedUSA

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