BiCMOS Technology and Applications pp 63-124 | Cite as

# BiCMOS Process Technology

## Abstract

For high performance LSI and VLSI digital circuit applications, BiCMOS technology has become predominantly driven from a CMOS processing base. The principle reason for this is that LSI and VLSI digital BiCMOS circuits tend to be CMOS-intensive because of power dissipation limitations (for example, high density ECL I/O SRAMs and gate arrays). The CMOS-intensive nature of these circuits requires a process technology that will result in the highest possible CMOS performance. Consequently, BiCMOS fabrication technology tends to be CMOSbased, and the process steps needed to realize a high performance bipolar device are usually merged with a core CMOS process flow [3.1, 3.2, 3.3]. In the case of analog BiCMOS, the increasing demand to have on-board digital logic integration has also resulted in these processes being CMOS-oriented.

## Keywords

Gate Oxide Bipolar Transistor Gate Length NMOS Transistor CMOS Device## Preview

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## References

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