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Device Design

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BiCMOS Technology and Applications

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 76))

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Abstract

The increasing acceptance of BiCMOS as a viable technology has brought to the forefront new challenges for the device physicist/designer. Ultimately, the device designer wishes to optimize the performance of the transistors while simultaneously maintaining process simplicity. The challenge to achieve this in the BiCMOS environment is heightened because the process requirements for the MOSFET and bipolar transistors often conflict with one another. Most of the compromises involved are determined in the design of the front-end of the process. However, since the MOSFET and BJT characteristics are strongly coupled, optimization of both devices can only occur at the expense of increased process complexity and the associated manufacturing cost. A thorough device design approach, coupled with the application of a statistically-based device design methodology, becomes critical for evaluating both performance tradeoffs and manufacturability implications.

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Authors and Affiliations

  1. Motorola Inc., USA

    J. Teplik

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  1. J. Teplik
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  1. Aspen Semiconductor Corporation (A Cypress Semiconductor Company), Cuba

    A. R. Alvarez

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© 1990 Springer Science+Business Media New York

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Teplik, J. (1990). Device Design. In: Alvarez, A.R. (eds) BiCMOS Technology and Applications. The Springer International Series in Engineering and Computer Science, vol 76. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2029-7_2

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  • DOI: https://doi.org/10.1007/978-1-4757-2029-7_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-2031-0

  • Online ISBN: 978-1-4757-2029-7

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