Abstract
Recently, several processes of physical vapor deposition have been developed to obtain hard refractory carbide and nitride films. Reactive sputtering(1), activated reactive evaporation with a probe electrode and grounded substrate (A R E)(2) and activated reactive evaporation with a biased substrate (Low Pressure Plasma Deposition: L PP D) were successfully used to produce TiC and TiN thick films. This paper describes the examination of these films coated on the steel plate and the WC-Co cemented carbide throw away tips by latter two processes, and also describes the distinctive feature of TiC thick films for corrosion resistance to molten Aluminum.
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References
Nakamura, K., Shinoki, F., Ito, A. Preparation of TiC Film by RF Reactive Sputtering. Journal of the Japan Institute of Metals, Vol. 38, No. 10, 1974, pp 913–919.
Bunshah, R. F., Raghuran, A. C., Activated Reactive Evaporation for High Rate Deposition of Compounds, Journal of Varuum Science and Technology, Vol. 9, No. 6, 1972, pp 1385–1388.
Raghrun, A. C., Bunshah, The Effect of Substrate Temperature on the Structure of Titanium Carbide Deposited by Activated Reactive Evaporation, Journal of Vacuum Science and Technology, Vol. 9, No. 6, 1972, pp 1389–1394.
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© 1982 Springer Science+Business Media New York
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Nakamura, K., Fukube, Y., Inagawa, K., Nozawa, Y. (1982). The Application of TiC and TiN Thick Films by PVD Processes. In: Williams, J.C., Belov, A.F. (eds) Titanium and Titanium Alloys. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1758-7_80
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DOI: https://doi.org/10.1007/978-1-4757-1758-7_80
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1760-0
Online ISBN: 978-1-4757-1758-7
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