The Application of TiC and TiN Thick Films by PVD Processes
Recently, several processes of physical vapor deposition have been developed to obtain hard refractory carbide and nitride films. Reactive sputtering(1), activated reactive evaporation with a probe electrode and grounded substrate (A R E)(2) and activated reactive evaporation with a biased substrate (Low Pressure Plasma Deposition: L PP D) were successfully used to produce TiC and TiN thick films. This paper describes the examination of these films coated on the steel plate and the WC-Co cemented carbide throw away tips by latter two processes, and also describes the distinctive feature of TiC thick films for corrosion resistance to molten Aluminum.
KeywordsFlank Wear High Substrate Temperature Crater Depth Reactive Evaporation Constant Evaporation Rate
Unable to display preview. Download preview PDF.
- 1.Nakamura, K., Shinoki, F., Ito, A. Preparation of TiC Film by RF Reactive Sputtering. Journal of the Japan Institute of Metals, Vol. 38, No. 10, 1974, pp 913–919.Google Scholar