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The Application of TiC and TiN Thick Films by PVD Processes

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Abstract

Recently, several processes of physical vapor deposition have been developed to obtain hard refractory carbide and nitride films. Reactive sputtering(1), activated reactive evaporation with a probe electrode and grounded substrate (A R E)(2) and activated reactive evaporation with a biased substrate (Low Pressure Plasma Deposition: L PP D) were successfully used to produce TiC and TiN thick films. This paper describes the examination of these films coated on the steel plate and the WC-Co cemented carbide throw away tips by latter two processes, and also describes the distinctive feature of TiC thick films for corrosion resistance to molten Aluminum.

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References

  1. Nakamura, K., Shinoki, F., Ito, A. Preparation of TiC Film by RF Reactive Sputtering. Journal of the Japan Institute of Metals, Vol. 38, No. 10, 1974, pp 913–919.

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  2. Bunshah, R. F., Raghuran, A. C., Activated Reactive Evaporation for High Rate Deposition of Compounds, Journal of Varuum Science and Technology, Vol. 9, No. 6, 1972, pp 1385–1388.

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  3. Raghrun, A. C., Bunshah, The Effect of Substrate Temperature on the Structure of Titanium Carbide Deposited by Activated Reactive Evaporation, Journal of Vacuum Science and Technology, Vol. 9, No. 6, 1972, pp 1389–1394.

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J. C. Williams A. F. Belov

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© 1982 Springer Science+Business Media New York

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Nakamura, K., Fukube, Y., Inagawa, K., Nozawa, Y. (1982). The Application of TiC and TiN Thick Films by PVD Processes. In: Williams, J.C., Belov, A.F. (eds) Titanium and Titanium Alloys. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1758-7_80

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  • DOI: https://doi.org/10.1007/978-1-4757-1758-7_80

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1760-0

  • Online ISBN: 978-1-4757-1758-7

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