The Hall Effect in Heavily Doped Semiconductors

  • Donald Long
  • O. N. Tufte

Abstract

The properties of the Hall effect in relatively pure, lightly-doped semiconductors are now generally well understood.1 However, the Hall effect and mobility in heavily-doped semiconductors, which have metal-like behavior, have been studied much less experimentally and are still not fully understood theoretically. This paper reviews the Hall effect and related properties of heavily-doped semiconductors for the cases of both uniform and non-uniform doping. The unexplained experimental results remain a challenge to theory, but the empirical knowledge of the Hall effect in heavily-doped semiconductors is useful in solid-state device technology.

Keywords

Hall Effect Hall Coefficient Mott Transition Conduction Band Edge Dope Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1980

Authors and Affiliations

  • Donald Long
    • 1
  • O. N. Tufte
    • 1
  1. 1.Honeywell Corporate Material Sciences CenterBloomingtonUSA

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