The Hall Effect in Heavily Doped Semiconductors

  • Donald Long
  • O. N. Tufte


The properties of the Hall effect in relatively pure, lightly-doped semiconductors are now generally well understood.1 However, the Hall effect and mobility in heavily-doped semiconductors, which have metal-like behavior, have been studied much less experimentally and are still not fully understood theoretically. This paper reviews the Hall effect and related properties of heavily-doped semiconductors for the cases of both uniform and non-uniform doping. The unexplained experimental results remain a challenge to theory, but the empirical knowledge of the Hall effect in heavily-doped semiconductors is useful in solid-state device technology.


Hall Effect Hall Coefficient Mott Transition Conduction Band Edge Dope Semiconductor 
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Copyright information

© Springer Science+Business Media New York 1980

Authors and Affiliations

  • Donald Long
    • 1
  • O. N. Tufte
    • 1
  1. 1.Honeywell Corporate Material Sciences CenterBloomingtonUSA

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