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Nondestructive Evaluation of Semiconductor Materials and Devices pp 315–395Cite as

Optical Characterization of Semiconductors

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Part of the book series: NATO Advanced Study Institutes Series ((NSSB,volume 46))

Abstract

Most samples are in the form of a slab or a thin film on a slab. We first review the optical properties of such samples described only by a complex index of refraction ñ = (n + ik). Later, we will determine the origin of n and k in a semiconductor so that we may characterize it in terms of free-carrier density, mobility, donor and acceptor densities, alloy homogeneity, etc.

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  1. Naval Research Laboratory, Washington, DC, 20375, USA

    E. D. Palik & R. T. Holm

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  1. E. D. Palik
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  1. The University of Pennsylvania, Philadelphia, Pennsylvania, USA

    Jay N. Zemel

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Palik, E.D., Holm, R.T. (1979). Optical Characterization of Semiconductors. In: Zemel, J.N. (eds) Nondestructive Evaluation of Semiconductor Materials and Devices. NATO Advanced Study Institutes Series, vol 46. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1352-7_7

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