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Steady-State and Non-Steady-State Characterization of MOS Devices

  • John G. Simmons
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 46)

Abstract

There are many a.c., d.c. and transient techniques available for the study of interfacial [1–20] and bulk trap [21–27] properties of MOS devices, far more than can be covered in these talks. The methods presented here reflects the personal interests of the author, and involve many of the physical underlying principles involved in other techniques. The features of the methods are the relative ease with which the desired information on the trap parameters can be extracted from the experimental data.

Keywords

Interface State Depletion Region Trap Density Interface Charge Interface Trap 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1979

Authors and Affiliations

  • John G. Simmons
    • 1
  1. 1.Department of Electrical EngineeringUniversity of TorontoTorontoCanada

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