Abstract
One of the well-established procedures used for a quantitative evaluation of the electrical properties of semiconductors is the measurement of their resistivity. Modern technological processes, particularly those concerned with manufacturing of semiconductor devices and integrated circuits require that such measurements be made not only of the spatial average of macroscopic specimens but also of localized microscopic fluctuations in their resistivity.
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Weider, H.H. (1979). Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements. In: Zemel, J.N. (eds) Nondestructive Evaluation of Semiconductor Materials and Devices. NATO Advanced Study Institutes Series, vol 46. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1352-7_2
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DOI: https://doi.org/10.1007/978-1-4757-1352-7_2
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