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Two-Probe (Spreading Resistance) Measurements for Evaluation of Semiconductor Materials and Devices

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Nondestructive Evaluation of Semiconductor Materials and Devices

Part of the book series: NATO Advanced Study Institutes Series ((NSSB,volume 46))

Abstract

Interest in two-probe resistance, (spreading resistance) measurements dates back perhaps 20 years. It arose at a time when the development of a number of techniques for measuring resistivity and resistivity profiles was being pursued, primarily for germanium and silicon technology. In the early days of its use, diffusions were relatively deep and control of epitaxial resistivity was an important problem. The structures of interest have changed noticeably in the interveninng years. Ion implantation has come into regular use and the dimensional scale of diffusions and epitaxy have been considerably reduced.

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Authors and Affiliations

  1. Electron Devices Division Center for Electronics and Electrical Engineering National Engineering Laboratory, National Bureau of Standards, Washington, DC, 20234, USA

    James R. Ehrstein

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  1. James R. Ehrstein
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Editors and Affiliations

  1. The University of Pennsylvania, Philadelphia, Pennsylvania, USA

    Jay N. Zemel

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© 1979 Springer Science+Business Media New York

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Ehrstein, J.R. (1979). Two-Probe (Spreading Resistance) Measurements for Evaluation of Semiconductor Materials and Devices. In: Zemel, J.N. (eds) Nondestructive Evaluation of Semiconductor Materials and Devices. NATO Advanced Study Institutes Series, vol 46. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1352-7_1

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  • DOI: https://doi.org/10.1007/978-1-4757-1352-7_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1354-1

  • Online ISBN: 978-1-4757-1352-7

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