Disorder Effects in the EXAFS of Metals and Semiconductors in the Solid and Liquid States

  • E. D. Crozier

Abstract

The EXAFS technique has been applied to structural determinations in a wide range of materials1,2,3,4 with notable success. In the systems investigated the local structural order about the X-ray absorbing atom varied from the order of metallic single crystals5 at 10K to the disorder6,7 of amorphous semiconductors and metallic glasses. Usually, the structural analyses proceeded under the assumption, frequently implicit, that the distribution of nearest atoms was Gaussian, the effect of thermal and structural disorder being included through the Debye-Waller-like term \( e{ - ^{2{k^2}{\sigma ^2}}} \).

Keywords

Neighbor Distance Asymmetric Effect Disorder Effect Asymmetry Effect Interference Function 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • E. D. Crozier
    • 1
  1. 1.Department of PhysicsSimon Fraser UniversityBurnabyCanada

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