Abstract
It is demonstrated that, in principle, it is possible to prepare photodiodes and photoresistors by the ion bombardment of thin (~1 µ) polycrystalline films of cadmium telluride. Possible applications of this method are considered.
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Literature Cited
G. A. Kachurin, A. E. Gorodetskii, Yu. V. Loburets, and L. S. Smirnov, Fiz. Tverd. Tela, 9:494 (1967) .
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© 1971 Springer Science+Business Media New York
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Kachurin, G.A., Gorodetskii, A.E., Zelevinskaya, V.M., Smirnov, L.S. (1971). Film Devices Prepared by the Ion Bombardment Method. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_6
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_6
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