Abstract
The spectral and current dependences of the luminescence of Ge-doped GaAs diodes were studied. A relation between the luminescence intensity J and the current I was found: I ∞ J1/n , where n = 5–7 for small forward currents and n = 1 for large forward currents. The exact relationship between the luminescence and the current is discussed bearing in mind the competition between possible recombination processes.
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Constantinescu, C., Popovici, G., Mihailovici, P., Petrescu, I. (1971). Radiative Recombination in Ge-Doped GaAs Diodes. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_49
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_49
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