Abstract
The results are reported of an investigation of low-energy (0.3-0,7 eV) recombination radiation emitted by p-n junctions in GaAs. The diodes were produced by the diffusion of zinc in gallium arsenide with an electron density 1015-1016 cm-3. At 80°K, bands were observed at 0.36, 0.58, 0.59, 0.61, and 0.65 eV. It was found that the intensities of the bands varied strongly from sample to sample even when a batch was prepared from a single cut. This indicated a nonuniform radial distribution of the compensating impurities in the original single crystal. The 0.65 eV band was due to the presence of oxygen. The 0.36 and 0.59 eV bands were observed at room temperature. No shifts of the maxima or changes in the band profiles were found when the samples were heated to room temperature.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsLiterature Cited
W. J. Turner, G. D. Pettit, and N. G. Ainslie, J. Appl. Phys., 34:3274 (1963).
C. Hilsum and A. C. Rose-Innes, Semiconducting III-V Compounds, Pergamon Press, Oxford (1961) .
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1971 Springer Science+Business Media New York
About this chapter
Cite this chapter
Lomako, V.M., Tkachev, V.D., Domanevskii, D.S. (1971). Low-Energy Recombination Radiation of p-n Junctions in GaAs. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_4
Download citation
DOI: https://doi.org/10.1007/978-1-4757-1232-2_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
Online ISBN: 978-1-4757-1232-2
eBook Packages: Springer Book Archive