Abstract
An investigation was made of the evolution of the radiation spectra of diffused p-n junctions in InP and InP0.94As0.0.6 in the current density range 1–104 A/cm2 at 77ºK. The narrowing of the spectral band was attributed to stimulated emission in the current density range 103–104 A/cm2. Changes in the spectra at current densities 1–10 A/cm2 were attributed to a transition from radiation originating from diagonal tunneling to injection radiation. Spectral narrowing in the stimulated emission range was used to estimate the loss and gain for the radiation propagated along the p-n junction. The loss was 3 cm-1 for InP and 8–16 cm-1 for InP0.94As0.06.
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Eliseev, P.G., Ismailov, I. (1971). Spectral Narrowing of the Radiation From InP and InP1-XAsX Injection Lasers. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_37
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_37
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