Skip to main content
SpringerLink
Log in

1/f Noise of Surface-Barrier Diodes

  • Chapter
Physics of p-n Junctions and Semiconductor Devices

  • 217 Accesses

Abstract

A study was made of the 1/f noise of surface-barrier diodes in various circuit configurations. A comparison was made of the noise characteristics of silicon surface-barrier diodes and of conventional germanium and silicon photodiodes. The results of noise measurements under photovoltaic conditions were analyzed on the basis of the fluctuations of the surface recombination velocity. It was found that the surface recombination velocity in“thin” photodiodes could be determined by comparing the noise under the short-circuit and open-circuit (photo-emf) conditions.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. A. van der Ziel, Fluctuation Phenomena in Semiconductors, Butterworths, London (1959).

    Google Scholar 

  2. D. N. Mirlin and Yu. S. Karpov, Fiz. Tverd. Tela, 4:700 (1962).

    Google Scholar 

  3. T. B. Watkins, Proc. Phys. Soc. (London), 73:59 (1959).

    Article  ADS  Google Scholar 

  4. A. L. McWhorter, in: Semiconductor Surface Physics (Proc. Conf., Philadelphia, 1956, R. H. Kingston, ed.), University of Pennsylvania Press, Philadelphia (1957), p. 207.

    Google Scholar 

  5. R. L. Petritz, in: Semiconductor Surface Physics (Proc. Conf., Philadelphia, 1956, R. H. Kingston, ed.), University of Pennsylvania Press, Philadelphia (1957), p. 226.

    Google Scholar 

  6. R. J. Archer, J. Electrochem. Soc., 104:619 (1957).

    Article  Google Scholar 

  7. D. E. Sawyer and R. H. Rediker, Proc. IR E, 46:1122 (1958).

    Article  Google Scholar 

  8. A. A. Grinberg and N. B. Strokan, Fiz. Tverd. Tela, 2:1536 (1960).

    Google Scholar 

  9. Yu. S. Karpov, Fiz. Tverd. Tela, 3:1691 (1961).

    Google Scholar 

  10. G. L. Bir, Fiz. Tverd. Tela, 1:67 (1959).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute Academy of Sciences of the USSR, Leningrad, Germany

    N. I. Sablina & N. B. Strokan

Authors
  1. N. I. Sablina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. B. Strokan
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

    S. M. Ryvkin  & Yu. V. Shmartsev  & 

Rights and permissions

Reprints and permissions

Copyright information

© 1971 Springer Science+Business Media New York

About this chapter

Cite this chapter

Sablina, N.I., Strokan, N.B. (1971). 1/f Noise of Surface-Barrier Diodes. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_21

Download citation

  • DOI: https://doi.org/10.1007/978-1-4757-1232-2_21

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1234-6

  • Online ISBN: 978-1-4757-1232-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation