Defects and Their Detectability in Melt-Grown Crystals

  • D. T. J. Hurle
  • B. Cockayne
Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 63)


In general the topography, and often the type, of defects to be found in a given crystal are characteristic of the method by which it has been grown. Indeed, one can infer much about the growth conditions from a study of defect structure. Broadly speaking, defects are introduced either during the liquid — solid phase change itself or during the subsequent change in temperature or pressure as the crystal is taken to ambient conditions.


Cellular Structure Cell Boundary Growth Axis Axis Crystal Segregation Coefficient 
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© Springer Science+Business Media New York 1980

Authors and Affiliations

  • D. T. J. Hurle
  • B. Cockayne

There are no affiliations available

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